Analog IC Design with Low-Dropout Regulators (LDOs) by Gabriel Rincon-Mora

By Gabriel Rincon-Mora

Master Analog Integrated-Circuit Design

Design, study, and construct linear low-dropout (LDO) regulator ICs in bipolar, CMOS, and biCMOS semiconductor strategy applied sciences. This authoritative advisor deals a different emphasis on embedded LDO layout. via intuitive factors and targeted illustrations, the publication exhibits how one can placed those theories to paintings developing analog ICs for the most recent transportable, battery-powered devices.

Analog IC layout with Low-Dropout Regulators information the full product improvement cycle-from defining targets and choosing elements to blueprinting, assembling, and fine-tuning functionality. paintings with semiconductors, hire detrimental suggestions, deal with fluctuating so much, and embed regulators in ICs. additionally, you will find out how to construct prototypes, practice exams, and combine system-on-chip (SoC) performance. detect how to:

  • Design, attempt, and gather BJT-, MOSFET-, and JFET-based linear regulators
  • Use present mirrors, buffers, amplifiers, and differential pairs
  • Integrate suggestions loops, unfavourable suggestions, and keep watch over limits
  • Maintain an self sustaining, reliable, noise-free, and predictable output voltage
  • Compensate for low enter present and large voltage swings
  • Optimize accuracy, potency, battery existence, and integrity
  • Implement overcurrent safety and thermal-shutdown features
  • Establish strength and working limits utilizing characterization thoughts

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Extra resources for Analog IC Design with Low-Dropout Regulators (LDOs) (Electronic Engineering)

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Microelectronic Devices 50 Chapter Two are used to link resistor segments, as shown in Fig. 3b, unless silicon real-estate demands supersede matching performance concerns. , R1 and R2), their constituent resistor segments can be interdigitated, as also shown in Fig. , doping concentration) on the resistors. If possible, for similar reasons, the resistors should also have a common center of mass and conform to a common-centroid configuration, as also illustrated in the figure. Finally, increasing the number of resistor segments and inter-digitating them increases the statistical granularity and resolution of the layout, further improving matching performance.

6c). Under these conditions, past breakdown voltage VBD, one or a combination of two breakdown mechanisms results that induces current flow. In a highly doped pn junction, for instance, where the region near the metallurgical junction is relatively difficult to deplete of carriers because of sheer abundance, the depletion width is narrow and the resulting electric field across it high, inducing electrons to tunnel through and across the region, as illustrated in Fig. 7. 7 EV PN-junction diode in its breakdown region.

PQ = VIN IQ ). , low VIN) while meeting its regulation objectives. , lowest IQ during light loading conditions). Dropout voltage is often the limiting factor in efficiency performance. From a specification standpoint, the minimum voltage sustained across the pass device when the circuit ceases to regulate is the dropout voltage. The loop, during this condition, drives the pass device to source maximum current to the output, but has no ac gain to offer and therefore no regulation capabilities.

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