3D TCAD Simulation for Semiconductor Processes, Devices and by Simon Li

By Simon Li

Technology computer-aided layout, or TCAD, is necessary to today’s semiconductor know-how and anyone operating during this must comprehend anything approximately TCAD. This ebook is set tips on how to use software program to fabricate and attempt almost semiconductor units in 3D. It brings to lifestyles the subject of semiconductor equipment physics, with a hands-on, instructional method that de-emphasizes summary physics and equations and emphasizes genuine perform and wide illustrations. assurance incorporates a accomplished library of units, representing the state-of-the-art expertise, similar to SuperJunction LDMOS, GaN LED units, etc.

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39) 28 2 Advanced Theory of TCAD Process Simulation A comparison to similar equations for static mechanics shows the viscosity is equivalent to the shear modulus and l is equivalent to Lame´’s first parameter. Similarly, we can define a quantity v which is equivalent to the Poisson’s ratio; in the case of a Newtonian fluid, we will refer to such a ratio as the compressibility. Please note that a Newtonian fluid is more general case of the familiar NavierStokes equation. 40) The Stokes hypothesis states that l þ 2m 3 ¼ 0 and therefore, the local mean pressure is equal to the thermal dynamic pressure.

On the other hand, dose matching generates more smooth profile if standard deviation of different materials is similar in values. GS was initially written as a purely geometric operation where a TCAD user define geometric shape to remove from the structure and the TCAD process simulator would cut off the mesh points accordingly. Some efforts have been made to associate the etching operation with the actual physics of etching. Compared with other models such as diffusion and oxidation, these physically based etch models are relatively simple.

10 Two vectors formed by the process simulator during deposition Fig. 7 Process Simulation Examples 39 Fig. 12 LOCOS growth before (left) and after (right) nitride is removed Fig. 13 Circular etch mask layout with cut lines (left) and net doping chart (right) A simple 3D thermal oxide growth example is presented here. 12 shows LOCOS growth before and after nitride is removed using full 3D simulation. 3 Etch Example In this example, a circular etch is performed with blanket implant. The initial silicon substrate is set to have constant doping of boron, with a doping concentration of 1E + 15 cmÀ3.

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